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JAN2N3499

JAN2N3499

JAN2N3499

Microsemi Corporation

JAN2N3499 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3499 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/366
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 100V
Turn Off Time-Max (toff) 1150ns
Turn On Time-Max (ton) 115ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $19.09510 $1909.51
JAN2N3499 Product Details

JAN2N3499 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.A VCE saturation (Max) of 600mV @ 30mA, 300mA means Ic has reached its maximum value(saturated).A transition frequency of 150MHz is present in the part.A maximum collector current of 500mA volts can be achieved.

JAN2N3499 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 150MHz

JAN2N3499 Applications


There are a lot of Microsemi Corporation JAN2N3499 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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