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JANTX2N3766

JANTX2N3766

JANTX2N3766

Microsemi Corporation

JANTX2N3766 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3766 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/518
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 25W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 3
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 25W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 5V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 100mA, 1A
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $33.21680 $3321.68
JANTX2N3766 Product Details

JANTX2N3766 Description


The JANTX2N3766 is a BJT Transistor.



JANTX2N3766 Features


  • Operating Temperature: -65°C~200°C TJ

  • Military, MIL-PRF-19500/518  Series

  • DC Current Gain (hFE) (Min) @ lC, Vce 40 @ 500mA 5V

  • Vce Saturation (Max) @ Ib, Ic 2.5V @ 100mA, 1A

  • Collector Base Voltage (VCBO) 80V



JANTX2N3766 Applications


  • Switching


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