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JAN2N3506AL

  • JAN2N3506AL
  • JAN2N3506AL

JAN2N3506AL

JAN2N3506AL

Microsemi Corporation

JAN2N3506AL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3506AL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/349
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1.5A 2V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 2.5A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 90ns
Turn On Time-Max (ton) 45ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $15.70800 $1570.8
JAN2N3506AL Product Details

JAN2N3506AL Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1.5A 2V.A VCE saturation (Max) of 1.5V @ 250mA, 2.5A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.The maximum collector current is 3A volts.

JAN2N3506AL Features


the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V

JAN2N3506AL Applications


There are a lot of Microsemi Corporation JAN2N3506AL applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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