Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JAN2N3741

JAN2N3741

JAN2N3741

Microsemi Corporation

JAN2N3741 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3741 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/441
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 25W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 25W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 125mA, 1A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $22.18080 $2218.08
JAN2N3741 Product Details

JAN2N3741 Overview


This device has a DC current gain of 30 @ 250mA 1V, which is the ratio between the collector current and the base current.When VCE saturation is 600mV @ 125mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

JAN2N3741 Features


the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 125mA, 1A
the emitter base voltage is kept at 7V

JAN2N3741 Applications


There are a lot of Microsemi Corporation JAN2N3741 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News