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JAN2N3764

JAN2N3764

JAN2N3764

Microsemi Corporation

JAN2N3764 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3764 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AB, TO-46-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/396
JESD-609 Code e0
Pbfree Code no
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Max Power Dissipation500mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Reference Standard MIL-19500
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1A 1.5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A
Collector Base Voltage (VCBO) 40V
Turn Off Time-Max (toff) 115ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1023 items

JAN2N3764 Product Details

JAN2N3764 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 1A 1.5V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 900mV @ 100mA, 1A.The maximum collector current is 1.5A volts.

JAN2N3764 Features


the DC current gain for this device is 30 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A

JAN2N3764 Applications


There are a lot of Microsemi Corporation JAN2N3764 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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