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JAN2N3868

JAN2N3868

JAN2N3868

Microsemi Corporation

JAN2N3868 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3868 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/350
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1.5A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 2.5A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
Turn Off Time-Max (toff) 600ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JAN2N3868 Product Details

JAN2N3868 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 1.5A 2V.When VCE saturation is 1.5V @ 250mA, 2.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.A maximum collector current of 3A volts is possible.

JAN2N3868 Features


the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V

JAN2N3868 Applications


There are a lot of Microsemi Corporation JAN2N3868 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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