BULK128D-B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BULK128D-B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
SOT-82
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
55W
Base Part Number
BULK128
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
55W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 2.5A
Collector Emitter Breakdown Voltage
400V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.544196
$2.544196
10
$2.400186
$24.00186
100
$2.264326
$226.4326
500
$2.136157
$1068.0785
1000
$2.015242
$2015.242
BULK128D-B Product Details
BULK128D-B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.When VCE saturation is 1.5V @ 500mA, 2.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.When collector current reaches its maximum, it can reach 4A volts.
BULK128D-B Features
the DC current gain for this device is 8 @ 2A 5V the vce saturation(Max) is 1.5V @ 500mA, 2.5A the emitter base voltage is kept at 9V
BULK128D-B Applications
There are a lot of STMicroelectronics BULK128D-B applications of single BJT transistors.