JAN2N4234 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N4234 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/580
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
AMPLIFIER
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 250mA 1V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$45.31280
$4531.28
JAN2N4234 Product Details
JAN2N4234 Overview
In this device, the DC current gain is 30 @ 250mA 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.During maximum operation, collector current can be as low as 1A volts.
JAN2N4234 Features
the DC current gain for this device is 30 @ 250mA 1V the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at 7V
JAN2N4234 Applications
There are a lot of Microsemi Corporation JAN2N4234 applications of single BJT transistors.