JANTXV2N3507AL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N3507AL Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/349
JESD-609 Code
e0
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1.5A 2V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 2.5A
Current - Collector (Ic) (Max)
3A
Collector Base Voltage (VCBO)
80V
Turn Off Time-Max (toff)
90ns
Turn On Time-Max (ton)
45ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$21.23520
$2123.52
JANTXV2N3507AL Product Details
JANTXV2N3507AL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 1.5A 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 250mA, 2.5A.When collector current reaches its maximum, it can reach 3A volts.
JANTXV2N3507AL Features
the DC current gain for this device is 30 @ 1.5A 2V the vce saturation(Max) is 1.5V @ 250mA, 2.5A
JANTXV2N3507AL Applications
There are a lot of Microsemi Corporation JANTXV2N3507AL applications of single BJT transistors.