JAN2N6051 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 6A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 120mA, 12A.An emitter's base voltage can be kept at 5V to gain high efficiency.

JAN2N6051 Features

the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

JAN2N6051 Applications

There are a lot of Microsemi Corporation JAN2N6051 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver