JAN2N6283 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N6283 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/504
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
175W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
DC Current Gain (hFE) (Min) @ Ic, Vce
1250 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-204AA
Vce Saturation (Max) @ Ib, Ic
3V @ 200mA, 20A
Current - Collector (Ic) (Max)
20A
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$56.62160
$5662.16
JAN2N6283 Product Details
JAN2N6283 Overview
This device has a DC current gain of 1250 @ 10A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3V ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 4MHz.
JAN2N6283 Features
the DC current gain for this device is 1250 @ 10A 3V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 200mA, 20A the emitter base voltage is kept at 7V a transition frequency of 4MHz
JAN2N6283 Applications
There are a lot of Microsemi Corporation JAN2N6283 applications of single BJT transistors.