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JAN2N6283

JAN2N6283

JAN2N6283

Microsemi Corporation

JAN2N6283 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N6283 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/504
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 175W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 1250 @ 10A 3V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-204AA
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A
Current - Collector (Ic) (Max) 20A
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $56.62160 $5662.16
JAN2N6283 Product Details

JAN2N6283 Overview


This device has a DC current gain of 1250 @ 10A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3V ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 4MHz.

JAN2N6283 Features


the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz

JAN2N6283 Applications


There are a lot of Microsemi Corporation JAN2N6283 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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