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JAN2N6350

JAN2N6350

JAN2N6350

Microsemi Corporation

JAN2N6350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N6350 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AC, TO-33-4 Metal Can
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/472
JESD-609 Code e0
Pbfree Code no
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count4
Qualification StatusQualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 1W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 5mA, 5A
Current - Collector (Ic) (Max) 5A
Collector Emitter Saturation Voltage1.5V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 12V
Turn On Time-Max (ton) 500ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:4812 items

JAN2N6350 Product Details

JAN2N6350 Overview


DC current gain in this device equals 2000 @ 5A 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 12V can achieve high levels of efficiency.

JAN2N6350 Features


the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V

JAN2N6350 Applications


There are a lot of Microsemi Corporation JAN2N6350 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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