JAN2N6350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N6350 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AC, TO-33-4 Metal Can
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/472
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
4
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
1W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 5mA, 5A
Current - Collector (Ic) (Max)
5A
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
12V
Turn On Time-Max (ton)
500ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N6350 Product Details
JAN2N6350 Overview
DC current gain in this device equals 2000 @ 5A 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 12V can achieve high levels of efficiency.
JAN2N6350 Features
the DC current gain for this device is 2000 @ 5A 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 5mA, 5A the emitter base voltage is kept at 12V
JAN2N6350 Applications
There are a lot of Microsemi Corporation JAN2N6350 applications of single BJT transistors.