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JAN2N6351

  • JAN2N6351
  • JAN2N6351

JAN2N6351

JAN2N6351

Microsemi Corporation

JAN2N6351 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N6351 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AC, TO-33-4 Metal Can
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/472
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 4
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 150V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 10mA, 5A
Current - Collector (Ic) (Max) 5A
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 12V
Turn On Time-Max (ton) 500ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $231.00000 $115500
JAN2N6351 Product Details

JAN2N6351 Overview


In this device, the DC current gain is 1000 @ 5A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.

JAN2N6351 Features


the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V

JAN2N6351 Applications


There are a lot of Microsemi Corporation JAN2N6351 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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