JANS2N6193 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANS2N6193 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/561
JESD-609 Code
e0
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Reference Standard
MILITARY STANDARD (USA)
Qualification Status
Qualified
Number of Elements
1
Power Dissipation
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-5
Vce Saturation (Max) @ Ib, Ic
1.2V @ 500mA, 5A
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$98.90000
$98.9
500
$97.911
$48955.5
1000
$96.922
$96922
1500
$95.933
$143899.5
2000
$94.944
$189888
2500
$93.955
$234887.5
JANS2N6193 Product Details
JANS2N6193 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 2A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V allows for a high level of efficiency.Collector current can be as low as 5A volts at its maximum.
JANS2N6193 Features
the DC current gain for this device is 60 @ 2A 2V the vce saturation(Max) is 1.2V @ 500mA, 5A the emitter base voltage is kept at 6V
JANS2N6193 Applications
There are a lot of Microsemi Corporation JANS2N6193 applications of single BJT transistors.