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JANSR2N2222AUB

JANSR2N2222AUB

JANSR2N2222AUB

Microsemi Corporation

JANSR2N2222AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANSR2N2222AUB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 33 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Supplier Device Package UB
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2007
Series Military, MIL-PRF-19500/255
Part Status Active
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 800mA
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $81.59160 $4079.58
JANSR2N2222AUB Product Details

JANSR2N2222AUB Overview


DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Product package UB comes from the supplier.There is a 50V maximal voltage in the device due to collector-emitter breakdown.

JANSR2N2222AUB Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB

JANSR2N2222AUB Applications


There are a lot of Microsemi Corporation JANSR2N2222AUB applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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