JANSR2N2222AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANSR2N2222AUB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
33 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Supplier Device Package
UB
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2007
Series
Military, MIL-PRF-19500/255
Part Status
Active
Power - Max
500mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
800mA
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$81.59160
$4079.58
JANSR2N2222AUB Product Details
JANSR2N2222AUB Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Product package UB comes from the supplier.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
JANSR2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of UB
JANSR2N2222AUB Applications
There are a lot of Microsemi Corporation JANSR2N2222AUB applications of single BJT transistors.