JANTX2N2946A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N2946A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-46-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/382
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
400mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
400mW
Case Connection
COLLECTOR
Transistor Application
CHOPPER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
35V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1mA 500mV
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-206AB
Collector Emitter Breakdown Voltage
35V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
40V
Turn Off Time-Max (toff)
450ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.339000
$8.339
10
$7.866981
$78.66981
100
$7.421680
$742.168
500
$7.001585
$3500.7925
1000
$6.605269
$6605.269
JANTX2N2946A Product Details
JANTX2N2946A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 1mA 500mV.Keeping the emitter base voltage at 40V allows for a high level of efficiency.When collector current reaches its maximum, it can reach 100mA volts.
JANTX2N2946A Features
the DC current gain for this device is 50 @ 1mA 500mV the emitter base voltage is kept at 40V
JANTX2N2946A Applications
There are a lot of Microsemi Corporation JANTX2N2946A applications of single BJT transistors.