JANTX2N3467 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3467 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/348
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.2V @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
175MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
90ns
Turn On Time-Max (ton)
40ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$389.81000
$389.81
10
$385.00000
$3850
JANTX2N3467 Product Details
JANTX2N3467 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 500mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.175MHz is present in the transition frequency.During maximum operation, collector current can be as low as 1A volts.
JANTX2N3467 Features
the DC current gain for this device is 40 @ 500mA 1V the vce saturation(Max) is 1.2V @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 175MHz
JANTX2N3467 Applications
There are a lot of Microsemi Corporation JANTX2N3467 applications of single BJT transistors.