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JANTX2N3467

JANTX2N3467

JANTX2N3467

Microsemi Corporation

JANTX2N3467 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3467 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/348
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.2V @ 100mA, 1A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 175MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 90ns
Turn On Time-Max (ton) 40ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $389.81000 $389.81
10 $385.00000 $3850
JANTX2N3467 Product Details

JANTX2N3467 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 500mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.175MHz is present in the transition frequency.During maximum operation, collector current can be as low as 1A volts.

JANTX2N3467 Features


the DC current gain for this device is 40 @ 500mA 1V
the vce saturation(Max) is 1.2V @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 175MHz

JANTX2N3467 Applications


There are a lot of Microsemi Corporation JANTX2N3467 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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