JANTX2N2221A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N2221A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-18 (TO-206AA)
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/255
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 10V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
800mA
Collector Base Voltage (VCBO)
75V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$10.81710
$1081.71
JANTX2N2221A Product Details
JANTX2N2221A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product comes in TO-18 (TO-206AA) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
JANTX2N2221A Features
the DC current gain for this device is 40 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of TO-18 (TO-206AA)
JANTX2N2221A Applications
There are a lot of Microsemi Corporation JANTX2N2221A applications of single BJT transistors.