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JANTX2N3767

  • JANTX2N3767
  • JANTX2N3767

JANTX2N3767

JANTX2N3767

Microsemi Corporation

JANTX2N3767 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3767 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-66
Number of Pins 3
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 25W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 3
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 25W
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 20
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $31.35510 $3135.51
JANTX2N3767 Product Details

JANTX2N3767 Overview


Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 10MHz.A maximum collector current of 4A volts is possible.

JANTX2N3767 Features


the emitter base voltage is kept at 6V
a transition frequency of 10MHz

JANTX2N3767 Applications


There are a lot of Microsemi Corporation JANTX2N3767 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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