JANTX2N3996 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3996 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Stud
Mounting Type
Chassis, Stud Mount
Package / Case
TO-111-4, Stud
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/374
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
2W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
4
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 2V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2V @ 500mA, 5A
Current - Collector (Ic) (Max)
10A
Collector Base Voltage (VCBO)
100V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTX2N3996 Product Details
JANTX2N3996 Overview
In this device, the DC current gain is 40 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 500mA, 5A.During maximum operation, collector current can be as low as 5A volts.
JANTX2N3996 Features
the DC current gain for this device is 40 @ 1A 2V the vce saturation(Max) is 2V @ 500mA, 5A
JANTX2N3996 Applications
There are a lot of Microsemi Corporation JANTX2N3996 applications of single BJT transistors.