JANTX2N4234 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N4234 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/580
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
AMPLIFIER
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 250mA 1V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$46.17900
$4617.9
JANTX2N4234 Product Details
JANTX2N4234 Overview
This device has a DC current gain of 30 @ 250mA 1V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.During maximum operation, collector current can be as low as 1A volts.
JANTX2N4234 Features
the DC current gain for this device is 30 @ 250mA 1V the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at 7V
JANTX2N4234 Applications
There are a lot of Microsemi Corporation JANTX2N4234 applications of single BJT transistors.