Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JAN2N3507AL

  • JAN2N3507AL
  • JAN2N3507AL

JAN2N3507AL

JAN2N3507AL

Microsemi Corporation

JAN2N3507AL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3507AL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/349
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1.5A 2V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 2.5A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 90ns
Turn On Time-Max (ton) 45ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $15.70800 $1570.8
JAN2N3507AL Product Details

JAN2N3507AL Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 1.5A 2V.A VCE saturation (Max) of 1.5V @ 250mA, 2.5A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.When collector current reaches its maximum, it can reach 3A volts.

JAN2N3507AL Features


the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 5V

JAN2N3507AL Applications


There are a lot of Microsemi Corporation JAN2N3507AL applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

Related Part Number

JAN2N2904
Microsemi Corporation
JAN2N2904
$0 $/piece
JANTX2N6383
Microsemi Corporation
JANTX2N6383
$0 $/piece
BCY79-IX PBFREE
Central Semiconductor Corp
BCY79-IX PBFREE
$0 $/piece
2N4930
Microsemi Corporation
2N4930
$0 $/piece
2N4864
Microsemi Corporation
2N4864
$0 $/piece
2N5415S
Microsemi Corporation
2N5415S
$0 $/piece
JAN2N5667
Microsemi Corporation
JAN2N5667
$0 $/piece
2N333AT2
Microsemi Corporation
2N333AT2
$0 $/piece
2N3467
Microsemi Corporation
2N3467
$0 $/piece
2N5050
Microsemi Corporation
2N5050
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News