JANTX2N5667S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N5667S Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/455
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
1.2W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
Reference Standard
MIL-19500/455E
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
JEDEC-95 Code
TO-5
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 5A
Current - Collector (Ic) (Max)
5A
Collector Base Voltage (VCBO)
400V
RoHS Status
Non-RoHS Compliant
JANTX2N5667S Product Details
JANTX2N5667S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1A, 5A.Collector current can be as low as 5A volts at its maximum.
JANTX2N5667S Features
the DC current gain for this device is 25 @ 1A 5V the vce saturation(Max) is 1V @ 1A, 5A
JANTX2N5667S Applications
There are a lot of Microsemi Corporation JANTX2N5667S applications of single BJT transistors.