JANTX2N5681 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N5681 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Package / Case
TO-39
Number of Pins
3
Packaging
Bulk
Published
2002
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
AMPLIFIER
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
JEDEC-95 Code
TO-205AD
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
4V
DC Current Gain-Min (hFE)
5
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$29.97810
$2997.81
JANTX2N5681 Product Details
JANTX2N5681 Overview
Emitter base voltages of 4V can achieve high levels of efficiency.30MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 1A volts.
JANTX2N5681 Features
the emitter base voltage is kept at 4V a transition frequency of 30MHz
JANTX2N5681 Applications
There are a lot of Microsemi Corporation JANTX2N5681 applications of single BJT transistors.