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JANTX2N5681

JANTX2N5681

JANTX2N5681

Microsemi Corporation

JANTX2N5681 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N5681 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Package / Case TO-39
Number of Pins 3
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 1W
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
JEDEC-95 Code TO-205AD
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 4V
DC Current Gain-Min (hFE) 5
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $29.97810 $2997.81
JANTX2N5681 Product Details

JANTX2N5681 Overview


Emitter base voltages of 4V can achieve high levels of efficiency.30MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 1A volts.

JANTX2N5681 Features


the emitter base voltage is kept at 4V
a transition frequency of 30MHz

JANTX2N5681 Applications


There are a lot of Microsemi Corporation JANTX2N5681 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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