JANTX2N6298 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N6298 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/540
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
3
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
64W
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 4A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2V @ 80mA, 8A
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
JANTX2N6298 Product Details
JANTX2N6298 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A 3V DC current gain.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 4MHz.A maximum collector current of 8A volts is possible.
JANTX2N6298 Features
the DC current gain for this device is 750 @ 4A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 80mA, 8A the emitter base voltage is kept at 5V a transition frequency of 4MHz
JANTX2N6298 Applications
There are a lot of Microsemi Corporation JANTX2N6298 applications of single BJT transistors.