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MJE521G

MJE521G

MJE521G

Rochester Electronics, LLC

MJE521G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJE521G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 40W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 1V
Current - Collector Cutoff (Max) 100μA ICBO
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 4A
RoHS Status ROHS3 Compliant
MJE521G Product Details

MJE521G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 1A 1V DC current gain.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

MJE521G Features


the DC current gain for this device is 40 @ 1A 1V

MJE521G Applications


There are a lot of Rochester Electronics, LLC MJE521G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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