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MJE521G

MJE521G

MJE521G

Rochester Electronics, LLC

MJE521G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJE521G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingBulk
JESD-609 Code e3
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 40W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A 1V
Current - Collector Cutoff (Max) 100μA ICBO
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 4A
RoHS StatusROHS3 Compliant
In-Stock:1996 items

MJE521G Product Details

MJE521G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 1A 1V DC current gain.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

MJE521G Features


the DC current gain for this device is 40 @ 1A 1V

MJE521G Applications


There are a lot of Rochester Electronics, LLC MJE521G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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