JANTX2N6301 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N6301 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Package / Case
TO-66
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
80V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Collector Current-Max (IC)
8A
DC Current Gain-Min (hFE)
100
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$38.30400
$3830.4
JANTX2N6301 Product Details
JANTX2N6301 Overview
A collector emitter saturation voltage of 2V ensures maximum design flexibility.Keeping the emitter base voltage at 5V allows for a high level of efficiency.There is a transition frequency of 4MHz in the part.
JANTX2N6301 Features
a collector emitter saturation voltage of 2V the emitter base voltage is kept at 5V a transition frequency of 4MHz
JANTX2N6301 Applications
There are a lot of Microsemi Corporation JANTX2N6301 applications of single BJT transistors.