JANTX2N6353 Overview

In this device, the DC current gain is 1000 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 10mA, 5A.Emitter base voltages of 12V can achieve high levels of efficiency.Product comes in TO-66 (TO-213AA) supplier package.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.

JANTX2N6353 Features

the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
the supplier device package of TO-66 (TO-213AA)

JANTX2N6353 Applications

There are a lot of Microsemi Corporation JANTX2N6353 applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver