2N2369AUB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 100mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 4.5V to achieve high efficiency.Collector current can be as low as 400nA volts at its maximum.
2N2369AUB Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
2N2369AUB Applications
There are a lot of Microsemi Corporation 2N2369AUB applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
