JANTX2N6766T1

new-10%

Manufacturer part number:JANTX2N6766T1

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-254

Case Package:SOT-23

Datasheet:JANTX2N6766T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-254-3, TO-254AA (Straight Leads)
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/543
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	PIN/PEG
Pin Count	3
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4W Ta 150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	90m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.065Ohm
DS Breakdown Voltage-Min	200V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant