JANTXV2N2946A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N2946A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/382
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
400mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
400mW
Case Connection
COLLECTOR
Transistor Application
CHOPPER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
35V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1mA 500mV
Current - Collector Cutoff (Max)
10μA ICBO
Collector Emitter Breakdown Voltage
35V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
40V
Turn Off Time-Max (toff)
450ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$24.34000
$24.34
JANTXV2N2946A Product Details
JANTXV2N2946A Overview
DC current gain in this device equals 50 @ 1mA 500mV, which is the ratio of the base current to the collector current.Keeping the emitter base voltage at 40V allows for a high level of efficiency.Maximum collector currents can be below 100mA volts.
JANTXV2N2946A Features
the DC current gain for this device is 50 @ 1mA 500mV the emitter base voltage is kept at 40V
JANTXV2N2946A Applications
There are a lot of Microsemi Corporation JANTXV2N2946A applications of single BJT transistors.