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JANTXV2N3439UA

JANTXV2N3439UA

JANTXV2N3439UA

Microsemi Corporation

JANTXV2N3439UA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3439UA Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/368
JESD-609 Code e4
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Gold (Au) - with Nickel (Ni) barrier
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 4
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 800mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Current - Collector Cutoff (Max) 2μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Collector Base Voltage (VCBO) 450V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV2N3439UA Product Details

JANTXV2N3439UA Overview


In this device, the DC current gain is 40 @ 20mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.The emitter base voltage can be kept at 7V for high efficiency.During maximum operation, collector current can be as low as 1A volts.

JANTXV2N3439UA Features


the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V

JANTXV2N3439UA Applications


There are a lot of Microsemi Corporation JANTXV2N3439UA applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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