JANTXV2N3735L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N3735L Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/395
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
900mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A 1.5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
75V
Turn Off Time-Max (toff)
60ns
Turn On Time-Max (ton)
48ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N3735L Product Details
JANTXV2N3735L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 1A 1.5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 100mA, 1A.A transition frequency of 250MHz is present in the part.The maximum collector current is 1.5A volts.
JANTXV2N3735L Features
the DC current gain for this device is 20 @ 1A 1.5V the vce saturation(Max) is 900mV @ 100mA, 1A a transition frequency of 250MHz
JANTXV2N3735L Applications
There are a lot of Microsemi Corporation JANTXV2N3735L applications of single BJT transistors.