2STC5949 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STC5949 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
220W
Base Part Number
2STC
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
25MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
17A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
250V
Current - Collector (Ic) (Max)
17A
Transition Frequency
25MHz
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
350
$2.83606
$992.621
2STC5949 Product Details
2STC5949 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1A 5V.A VCE saturation (Max) of 3V @ 800mA, 8A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.In this part, there is a transition frequency of 25MHz.The maximum collector current is 17A volts.
2STC5949 Features
the DC current gain for this device is 80 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 6V a transition frequency of 25MHz
2STC5949 Applications
There are a lot of STMicroelectronics 2STC5949 applications of single BJT transistors.