JANTXV2N3749 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N3749 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Stud
Mounting Type
Stud Mount
Package / Case
TO-111-4, Stud
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2004
Series
Military, MIL-PRF-19500/315
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
2W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Case Connection
ISOLATED
Polarity/Channel Type
PNP
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 2V
Current - Collector Cutoff (Max)
20μA
JEDEC-95 Code
TO-59
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 5A
Collector Base Voltage (VCBO)
110V
Emitter Base Voltage (VEBO)
8V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N3749 Product Details
JANTXV2N3749 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 2V.A VCE saturation (Max) of 1.5V @ 500mA, 5A means Ic has reached its maximum value(saturated).Emitter base voltages of 8V can achieve high levels of efficiency.Collector current can be as low as 5A volts at its maximum.
JANTXV2N3749 Features
the DC current gain for this device is 40 @ 1A 2V the vce saturation(Max) is 1.5V @ 500mA, 5A the emitter base voltage is kept at 8V
JANTXV2N3749 Applications
There are a lot of Microsemi Corporation JANTXV2N3749 applications of single BJT transistors.