JANTXV2N5416U4 Overview

DC current gain in this device equals 30 @ 50mA 10V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 5mA, 50mA.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.

JANTXV2N5416U4 Features

the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA

JANTXV2N5416U4 Applications

There are a lot of Microsemi Corporation JANTXV2N5416U4 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver