JANTXV2N6052 Overview

DC current gain in this device equals 1000 @ 6A 3V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.

JANTXV2N6052 Features

the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

JANTXV2N6052 Applications

There are a lot of Microsemi Corporation JANTXV2N6052 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver