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JANTX2N3251AUB

JANTX2N3251AUB

JANTX2N3251AUB

Microsemi Corporation

JANTX2N3251AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3251AUB Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Supplier Device Package UB
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/323
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 360mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 200mA
RoHS Status Non-RoHS Compliant
JANTX2N3251AUB Product Details

JANTX2N3251AUB Overview


This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Product comes in UB supplier package.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

JANTX2N3251AUB Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of UB

JANTX2N3251AUB Applications


There are a lot of Microsemi Corporation JANTX2N3251AUB applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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