JANTX2N3251AUB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N3251AUB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Supplier Device Package
UB
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/323
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
360mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
200mA
RoHS Status
Non-RoHS Compliant
JANTX2N3251AUB Product Details
JANTX2N3251AUB Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Product comes in UB supplier package.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
JANTX2N3251AUB Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 500mV @ 5mA, 50mA the supplier device package of UB
JANTX2N3251AUB Applications
There are a lot of Microsemi Corporation JANTX2N3251AUB applications of single BJT transistors.