Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JANTXV2N6058

  • JANTXV2N6058
  • JANTXV2N6058

JANTXV2N6058

JANTXV2N6058

Microsemi Corporation

JANTXV2N6058 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N6058 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/502
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 150W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 6A 3V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-204AA
Vce Saturation (Max) @ Ib, Ic 3V @ 120mA, 12A
Current - Collector (Ic) (Max) 12A
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $92.08080 $9208.08
JANTXV2N6058 Product Details

JANTXV2N6058 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 6A 3V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.

JANTXV2N6058 Features


the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V

JANTXV2N6058 Applications


There are a lot of Microsemi Corporation JANTXV2N6058 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

Related Part Number

JANTXV2N2218AL
Microsemi Corporation
JANTXV2N2218AL
$0 $/piece
JANTXV2N3999
Microsemi Corporation
JANTXV2N3999
$0 $/piece
JAN2N5151
Microsemi Corporation
JAN2N5151
$0 $/piece
JAN2N3418S
Microsemi Corporation
JAN2N3418S
$0 $/piece
MMBT3416LT3
Rochester Electronics, LLC
MMBT3416LT3
$0 $/piece
JAN2N2218AL
Microsemi Corporation
JAN2N2218AL
$0 $/piece
2N4449UB
Microsemi Corporation
2N4449UB
$0 $/piece
2N1481
Microsemi Corporation
2N1481
$0 $/piece
2N3999
Microsemi Corporation
2N3999
$0 $/piece
JAN2N3902
Microsemi Corporation
JAN2N3902
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News