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2N3999

2N3999

2N3999

Microsemi Corporation

2N3999 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3999 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Stud
Package / Case TO-111
Number of Pins 4
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-MUPM-X3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 80V
JEDEC-95 Code TO-59
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 8V
Collector Current-Max (IC) 5A
DC Current Gain-Min (hFE) 20
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $119.99400 $11999.4
2N3999 Product Details

2N3999 Overview


A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.

2N3999 Features


the emitter base voltage is kept at 8V

2N3999 Applications


There are a lot of Microsemi Corporation 2N3999 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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