JANTXV2N6283 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N6283 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/504
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
175W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
DC Current Gain (hFE) (Min) @ Ic, Vce
1250 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 200mA, 20A
Current - Collector (Ic) (Max)
20A
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$67.53180
$6753.18
JANTXV2N6283 Product Details
JANTXV2N6283 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1250 @ 10A 3V.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 7V can achieve high levels of efficiency.There is a transition frequency of 4MHz in the part.
JANTXV2N6283 Features
the DC current gain for this device is 1250 @ 10A 3V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 200mA, 20A the emitter base voltage is kept at 7V a transition frequency of 4MHz
JANTXV2N6283 Applications
There are a lot of Microsemi Corporation JANTXV2N6283 applications of single BJT transistors.