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2N3250A

2N3250A

2N3250A

Microsemi Corporation

2N3250A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3250A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Supplier Device Package TO-39 (TO-205AD)
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 360mW
Power - Max 360mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 200mA
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $12.37010 $1237.01
2N3250A Product Details

2N3250A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The product comes in the supplier device package of TO-39 (TO-205AD).A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 200mA volts at its maximum.

2N3250A Features


the DC current gain for this device is 50 @ 10mA 1V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the supplier device package of TO-39 (TO-205AD)

2N3250A Applications


There are a lot of Microsemi Corporation 2N3250A applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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