2N3250A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3250A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-39 (TO-205AD)
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
360mW
Power - Max
360mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
200mA
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$12.37010
$1237.01
2N3250A Product Details
2N3250A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The product comes in the supplier device package of TO-39 (TO-205AD).A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 200mA volts at its maximum.
2N3250A Features
the DC current gain for this device is 50 @ 10mA 1V the vce saturation(Max) is 500mV @ 5mA, 50mA the supplier device package of TO-39 (TO-205AD)
2N3250A Applications
There are a lot of Microsemi Corporation 2N3250A applications of single BJT transistors.