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JANTXV2N6353

  • JANTXV2N6353
  • JANTXV2N6353

JANTXV2N6353

JANTXV2N6353

Microsemi Corporation

JANTXV2N6353 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N6353 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/472
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 4
JESD-30 Code O-MBCY-W3
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 150V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 10mA, 5A
Current - Collector (Ic) (Max) 5A
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 12V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
JANTXV2N6353 Product Details

JANTXV2N6353 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 5A 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 50MHz.

JANTXV2N6353 Features


the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz

JANTXV2N6353 Applications


There are a lot of Microsemi Corporation JANTXV2N6353 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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