JANTXV2N7373 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N7373 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/613
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
HIGH RELIABILITY
HTS Code
8541.29.00.95
Max Power Dissipation
58W
Terminal Position
SINGLE
Terminal Form
PIN/PEG
Pin Count
3
Reference Standard
MIL
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
4W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2.5A 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 5A
Current - Collector (Ic) (Max)
5A
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N7373 Product Details
JANTXV2N7373 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 2.5A 5V.A VCE saturation (Max) of 1.5V @ 500mA, 5A means Ic has reached its maximum value(saturated).Collector current can be as low as 5A volts at its maximum.
JANTXV2N7373 Features
the DC current gain for this device is 70 @ 2.5A 5V the vce saturation(Max) is 1.5V @ 500mA, 5A
JANTXV2N7373 Applications
There are a lot of Microsemi Corporation JANTXV2N7373 applications of single BJT transistors.