2PA1774RMB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PA1774RMB,315 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2PA1774
Pin Count
3
Power - Max
250mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.04832
$0.4832
2PA1774RMB,315 Product Details
2PA1774RMB,315 Overview
In this device, the DC current gain is 180 @ 1mA 6V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2PA1774RMB,315 Features
the DC current gain for this device is 180 @ 1mA 6V the vce saturation(Max) is 200mV @ 5mA, 50mA the emitter base voltage is kept at 5V
2PA1774RMB,315 Applications
There are a lot of Nexperia USA Inc. 2PA1774RMB,315 applications of single BJT transistors.