BSR33TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BSR33TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BSR33
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Continuous Collector Current
-1A
Height
1.5mm
Length
4.5mm
Width
2.5mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.224689
$0.224689
10
$0.211971
$2.11971
100
$0.199972
$19.9972
500
$0.188653
$94.3265
1000
$0.177975
$177.975
BSR33TA Product Details
BSR33TA Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -1A.An emitter's base voltage can be kept at 5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.100MHz is present in the transition frequency.A breakdown input voltage of 80V volts can be used.The maximum collector current is 1A volts.
BSR33TA Features
the DC current gain for this device is 100 @ 100mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 100MHz
BSR33TA Applications
There are a lot of Diodes Incorporated BSR33TA applications of single BJT transistors.