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2PB709BSL,215

  • 2PB709BSL,215
  • 2PB709BSL,215

2PB709BSL,215

2PB709BSL,215

Nexperia USA Inc.

2PB709BSL,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PB709BSL,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 200MHz
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 210
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.374991 $0.374991
10 $0.353765 $3.53765
100 $0.333740 $33.374
500 $0.314849 $157.4245
1000 $0.297028 $297.028
2PB709BSL,215 Product Details

2PB709BSL,215 Overview


In this device, the DC current gain is 210 @ 2mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 6V for high efficiency.200MHz is present in the transition frequency.A maximum collector current of 200mA volts can be achieved.

2PB709BSL,215 Features


the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz

2PB709BSL,215 Applications


There are a lot of Nexperia USA Inc. 2PB709BSL,215 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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