2SA1774EBTLP Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -150mA to achieve high efficiency.The base voltage of the emitter can be kept at -6V to achieve high efficiency.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SA1774EBTLP Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
2SA1774EBTLP Applications
There are a lot of ROHM Semiconductor 2SA1774EBTLP applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
