BC817K-40R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC817K-40R Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Power - Max
250mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
100MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03570
$0.1071
BC817K-40R Product Details
BC817K-40R Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Device displays Collector Emitter Breakdown (45V maximal voltage).
BC817K-40R Features
the DC current gain for this device is 250 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA
BC817K-40R Applications
There are a lot of Nexperia USA Inc. BC817K-40R applications of single BJT transistors.