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BC817K-40R

BC817K-40R

BC817K-40R

Nexperia USA Inc.

BC817K-40R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC817K-40R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03570 $0.1071
BC817K-40R Product Details

BC817K-40R Overview


This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Device displays Collector Emitter Breakdown (45V maximal voltage).

BC817K-40R Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC817K-40R Applications


There are a lot of Nexperia USA Inc. BC817K-40R applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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