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BC857BW,135

  • BC857BW,135
  • BC857BW,135

BC857BW,135

BC857BW,135

Nexperia USA Inc.

BC857BW,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC857BW,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC857
Pin Count 3
Number of Elements 1
Voltage 45V
Element Configuration Single
Current 1A
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Collector-Base Capacitance-Max 5pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.024762 $0.024762
500 $0.018207 $9.1035
1000 $0.015173 $15.173
2000 $0.013920 $27.84
5000 $0.013009 $65.045
10000 $0.012102 $121.02
15000 $0.011704 $175.56
50000 $0.011508 $575.4
BC857BW,135 Product Details

BC857BW,135 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.In this part, there is a transition frequency of 100MHz.Breakdown input voltage is 45V volts.A maximum collector current of 100mA volts can be achieved.

BC857BW,135 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC857BW,135 Applications


There are a lot of Nexperia USA Inc. BC857BW,135 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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